TSSP58P38 www.vishay.com vishay semiconductors rev. 1.2, 31-jan-13 1 document number: 82476 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ir detector for mid range proximity sensor mechanical data pinning 1 = out, 2 = gnd, 3 = v s description the TSSP58P38 is a compact infr ared detector module for proximity sensing application. it receives 38 khz modulated signals and has a peak sensitivity of 940 nm. the length of the detectors ou tput pulse varies in proportion to the amount of light reflected from the object being detected. features ? up to 2 m for proximity sensing ? receives 38 khz modulated signal ? 940 nm peak wavelength ? photo detector and pream plifier in one package ? low supply current ? shielding against emi ? visible light is suppressed by ir filter ? insensitive to supply voltage ripple and noise ? supply voltage: 2.5 v to 5.5 v ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? safety switches for garage d oor, elevator door, gates, and industrial light curtains ? reflective sensors for toilet, urinal, faucet and hand dryer, and towel dispenser ? navigational sensor for robotics ? sensor for large format touch panels ? object detection in vendin g machines, parking lots, atms, and many others note (1) other frequencies available by request block diagram application circuit 19026 parts table carrier frequency mid range sensor 38 khz (1) TSSP58P38 33 k 2 3 1 v s out demo- gnd pass agc input pin band dulator control circuit 16833_5 + 3 v ir emitter + 3 v 38 khz out to c t ss p58p38 envelope s ignal
TSSP58P38 www.vishay.com vishay semiconductors rev. 1.2, 31-jan-13 2 document number: 82476 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to the device. this is a stress ratin g only and functional operation of the device at these or any other cond itions beyond those indicated in the operational sections of t his specification is not implied. exposure to absolute maximum rating co ndtions for extended periods may affect the device reliability. typical characterstics (t amb = 25 c, unless otherwise specified) fig. 1 - output active low fig. 2 - puls e length and sensitivity in dark ambient absolute maximum ratings parameter test condition symbol value unit supply voltage (pin 3) v s - 0.3 to + 6 v supply current (pin 3) i s 5ma output voltage (pin 1) v o - 0.3 to 5.5 v voltage at output to supply v s - v o - 0.3 to (v s + 0.3) v output current (pin 1) i o 5ma junction temperature t j 100 c storage temperature range t stg - 25 to + 85 c operating temperature range t amb - 25 to + 85 c power consumption t amb ? 85 c p tot 10 mw soldering temperature t ? 10 s, 1 mm from case t sd 260 c electrical and optical characterstics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit supply current (pin 3) e e = 0, v s = 5 v i sd 0.55 0.7 0.9 ma e v = 40 klx, sunlight i sh 0.8 ma supply voltage v s 2.5 5.5 v receiving distance direct line of sight, test signal see fig. 1, ir diode tsal6200, i f = 250 ma d40m output voltage low (pin 1) i osl = 0.5 ma, e e = 0.7 mw/m 2 , test signal see fig. 1 v osl 100 mv minimum irradiance pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig. 1 e e min. 0.2 0.4 mw/m 2 maximum irradiance t pi - 5/f o < t po < t pi + 6/f o , test signal see fig. 1 e e max. 50 w/m 2 directivity angle of half receiving distance ? 1/2 45 deg e e t t * t pi 10/f 0 is recommended for optimal function v o v oh v ol t 16110_4 optical test signal (ir diode tsal6200, i f = 0.4 a, 30 pulses, f = f 0 , t = 10 ms) output signal t d 1) t po 2) 1) 7/f 0 < t d < 15/f 0 2) t pi - 5/f 0 < t po < t pi + 6/f 0 t pi * 1.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1 10 10 2 10 3 10 4 e e - irradiance (mw/m 2 ) t po - output pulse width (ms) input burst length output pulse width = 950 nm, optical test signal, fig.1 0 0.1
TSSP58P38 www.vishay.com vishay semiconductors rev. 1.2, 31-jan-13 3 document number: 82476 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - frequency depe ndence of responsivity fig. 4 - sensitivity in bright ambient fig. 5 - sensitivity vs. supply voltage disturbances fig. 6 - maximum output pulse width vs. irradiance fig. 7 - sensitivity vs. ambient temperature fig. 8 - relative spectral sensitivity vs. wavelength 0.0 0.2 0.4 0.6 0.8 0.9 1.0 25 30 45 50 f/f 0 - relative frequency e /e - rel. responsivity e min. e 40 35 0.1 0.3 0.5 0.7 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.1 1 10 100 e e - ambient dc irradiance (w/m 2 ) e e min. - threshold irradiance (mw/m 2 ) correlation with ambient light sources: 10 w/m 2 = 1.4 klx (std. illum. a, t = 2855 k) 10 w/m 2 = 8.2 klx (daylight, t = 5900 k) wavelength of ambient illumination: = 950 nm 4.5 5.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 100 1000 v s rms - ac voltage on dc supply voltage (mv) e e min. - threshold irradiance (mw/m 2 ) f = f 0 f = 20 khz f = 30 khz f = 100 hz f = 10 khz 22088 0 20 40 60 80 100 120 140 160 180 200 0.1 1 10 100 t po - output pulse width (ms) e e - irradiance (mw/m 2 ) burst length = 300 ms, f = f o t amb - ambient temperature (c) e e min. - sensitivity (mw/m 2 ) 0 0.05 0.10 0.15 0.20 0.40 - 30 - 10 10 30 50 70 90 0.30 0.25 0.35 750 850 950 1050 0 0.2 0.4 0.6 0.8 1.2 s ( ) rel - relative spectral sensitivity - wavelength (nm) 1150 94 8408 1.0
TSSP58P38 www.vishay.com vishay semiconductors rev. 1.2, 31-jan-13 4 document number: 82476 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - max. rate of bursts fig. 10 - angle characteristic fig. 11 - t po vs. distance kodak gray card plus 15 % fig. 12 - dynamic ra nge of sensor vs. t pi the typical application of the TSSP58P38 is a reflective sensor wi th analog information contained in its output. such a sensor is evaluating the time required by the ag c to suppress a quasi continuous signal. the time required to suppress such a signal is longer when the signal is strong than when the signal is w eak, resulting in a pulse length co rresponding to the distance of an object from the sensor. this kind of analog information can be ev aluated by a microcontroller. th e absolute amount of reflected light depends much on the environment and is not evaluated. only sudden changes of the amount of reflected light, and therefore changes in the pulse width, are evaluated using this application. ? example of a signal pattern: 0 100 200 300 400 500 800 0 40 80 120 180 20 60 100 140 t pi (ms) t repeat min. (ms) 600 700 160 0 0.2 0.4 0.6 0.8 1.0 1.2 - 80 80 angle () relative response distance 60 40 20 0 - 20 - 40 - 60 directivity characteri s tic of a reflective s en s or u s ing v s lb3940 and t ss p58p38 response distance (m) t po (ms) 0 20 40 60 80 100 120 140 0.0 0.4 0.8 1.2 1.6 2.0 2.4 i f = 100 ma i f = 50 ma i f = 30 ma i f = 10 ma emitter: v s lb3940 t pi (ms) d max. /d min. 0 1 2 3 4 5 6 7 10 20 30 40 110 120 100 90 80 70 60 50 optical signal response of the TSSP58P38 (strong reflection) t repeat = 500 ms t pi = 120 ms, 38 khz response of the TSSP58P38 (weak reflection)
TSSP58P38 www.vishay.com vishay semiconductors rev. 1.2, 31-jan-13 5 document number: 82476 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 example for a sensor hardware: there should be no common window in front of the emitter and receiver in order to avoi d crosstalk by guided light through the window. the logarithmic characteristic of the agc in the TSSP58P38 results in an almost linear rela tionship between distance and pulse width. ambient light has al so some impact to the pulse width of this kind of sensor, making the pulse shorter. package dimensions in millimeters emitter t s al6200 ir receiver t ss p58p38 s eparation to avoid cro ss talk by s tray light in s ide the hou s ing 1.2 0.2 30.5 0.5 5 6.95 0.3 (5.55) 8.25 0.3 0.85 max. (1.54) 0.9 1.1 (4) 4.8 2.8 drawing-no.: 6.550-5263.01-4 i ss ue: 12; 16.04.10 2.54 nom. 2.54 nom. 0.5 max. 0.7 max. s pecification s according to din technical drawing s not indicated to lerance s 0.2 marking area r 2 r 2 19009
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